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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.
L 1.78 0.2 1
PACKAGE DIMENSIONS (Unit: mm)
FEATURES
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz * Gate Width: Wg = 280 m
1.78 0.2
L
U
2 L 3 L 4
ORDERING INFORMATION
SUPPLYING FORM STICK Tape & reel
PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A
LEAD LENGTH
L = 1.0 0.2 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 -3.0 IDSS 165 150 -65 to +150 V mA mW C C
1. Source 2. Drain 3. Source 4. Gate
RECOMMENDED OPERATING CONDITION (TA = 25 C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm
Document No. P10874EJ2V0DS00 (2nd edition) (Previous No. TD-2369) Date Published October 1995 P Printed in Japan
(c)
0.1
V
1.7 MAX.
L = 1.7 mm MIN.
0.5 TYP.
0.5 TYP.
1995
NE33284A
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure SYMBOL IGSO IDSS VGS(off) gm NF 15 -0.2 45 MIN. TYP. 0.5 40 -0.8 70 0.75 0.35 Associated Gain Ga 9.5 13.0 10.5 15.0 1.0 0.45 dB MAX. 10 80 -2.0 UNIT TEST CONDITIONS VGS = -3 V VDS = 2 V, VGS = 0 VDS = 2 V, ID = 100 A VDS = 2 V, ID = 10 mA f = 12 GHz f = 4 GHz f = 12 GHz f = 4 GHz VDS = 2 V ID = 10 mA
A
mA V mS dB
PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with AlGaAs shottky barrier gate.
2
NE33284A
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 50
Ptot - Total Power Dissipation - mW
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V
200
ID - Drain Current - mA
40 -0.2 V 30 -0.4 V
150
100
20
50
10
-0.6 V
0
50
100
150
200
250
0
1
2
3
4
5
TA - Ambient Temperature - C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50
MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB 2 | S21s | - Forward Insertion Gain - dB
MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA 20 MSG. 16 | IS21s | 12
2
VDS = 2 V 40
ID - Drain Current - mA
30
20
MAG.
10
8
0 -2.0
-1.0 VGS - Gate to Source Voltage - V
0
4 1
2
4
6
8 10
14
20
30
f - Frequency - GHz
Gain Calculations
MSG. = | S 21 | | S12 | | S 21 | (K K 2 - 1) | S12 | K= 1 + | |2 - | S11 |2 - | S 22 |2 2 | S12 || S 21 |
MAG. =
= S11 S 22 - S 21 S12
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NE33284A
S-Parameters VDS = 2 V, ID = 10 mA START 500 MHz, STOP 18 GHz, STEP 500 MHz
Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz
S11
1.0 0.5 2.0 +135 5 4 3
S12
+90
+45
0
0.5
1.0
2.0
180
1
2 3 5 4
0
2 -0.5 -1.0 1 -2.0 Rmax. = 1 -135 -90 -45 Rmax. = 0.25
S21
+90 +135 +45 0.5
S22
1.0 2.0
1 2 180 5 4 3 0 0 4
5
3 2 1 -2.0 -1.0 Rmax. = 1
-135 -90
-45 Rmax. = 7.5
-0.5
4
NE33284A
MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz 500.0000 1000.0000 1500.0000 2000.0000 2500.0000 3000.0000 3500.0000 4000.0000 4500.0000 5000.0000 5500.0000 6000.0000 6500.0000 7000.0000 7500.0000 8000.0000 8500.0000 9000.0000 9500.0000 10000.0000 10500.0000 11000.0000 11500.0000 12000.0000 12500.0000 13000.0000 13500.0000 14000.0000 14500.0000 15000.0000 15500.0000 16000.0000 16500.0000 17000.0000 17500.0000 18000.0000 MAG. .916 .903 .912 .903 .900 .876 .845 .811 .778 .754 .732 .707 .681 .652 .626 .599 .579 .558 .542 .533 .523 .511 .497 .483 .466 .444 .424 .406 .397 .389 .391 .392 .390 .382 .367 .345 S11 ANG. (deg.) -9.3 -17.2 -26.2 -34.3 -44.2 -53.4 -62.4 -70.6 -78.8 -86.7 -94.8 -102.7 -109.7 -116.3 -122.5 -128.1 -134.0 -139.9 -146.1 -152.1 -158.8 -164.7 -170.2 -175.7 179.0 173.7 167.8 162.0 155.4 148.8 141.2 133.9 127.2 119.9 113.0 106.0 5.239 5.144 5.206 5.147 5.125 5.012 4.862 4.683 4.533 4.378 4.251 4.093 3.933 3.760 3.609 3.480 3.363 3.250 3.151 3.068 3.006 2.942 2.870 2.809 2.742 2.678 2.633 2.562 2.537 2.502 2.479 2.448 2.426 2.395 2.330 2.273 MAG. S21 ANG. (deg.) 170.8 162.6 154.0 146.4 136.7 127.3 118.4 110.7 102.7 95.2 87.5 80.0 73.0 66.1 59.7 53.6 47.5 41.7 35.9 30.5 24.8 18.6 12.6 7.0 .9 -4.8 -10.4 -16.1 -21.1 -26.7 -32.3 -38.0 -44.7 -51.3 -58.0 -64.6 .011 .021 .032 .041 .050 .059 .065 .071 .076 .082 .086 .091 .092 .095 .098 .100 .103 .105 .108 .111 .114 .116 .119 .119 .123 .124 .129 .130 .134 .141 .140 .142 .145 .145 .149 .152 MAG. S12 ANG. (deg.) 83.5 76.8 71.7 66.1 60.3 55.0 49.9 45.6 41.7 37.8 33.7 29.9 26.6 24.2 21.2 18.3 16.3 13.2 10.8 9.1 6.7 3.6 .7 -1.4 -3.1 -6.2 -9.1 -12.0 -14.4 -17.9 -21.7 -24.6 -29.2 -32.6 -36.6 -42.1 .618 .609 .598 .580 .563 .541 .517 .493 .469 .447 .425 .405 .387 .372 .358 .344 .333 .322 .313 .311 .317 .330 .338 .344 .350 .356 .358 .363 .375 .384 .408 .421 .437 .448 .462 .471 MAG. S22 ANG. (deg.) -7.0 -13.8 -20.5 -27.6 -34.0 -40.4 -46.2 -52.4 -58.6 -65.1 -71.6 -78.3 -83.9 -89.3 -95.0 -101.1 -107.9 -115.2 -123.4 -130.5 -136.6 -144.7 -151.0 -156.5 -161.0 -166.5 -171.1 -177.3 177.6 170.9 164.3 158.1 153.6 148.2 144.1 139.4
5
NE33284A
AMP. PARAMETERS FREQUENCY MHz 500.0000 1000.0000 1500.0000 2000.0000 2500.0000 3000.0000 3500.0000 4000.0000 4500.0000 5000.0000 5500.0000 6000.0000 6500.0000 7000.0000 7500.0000 8000.0000 8500.0000 9000.0000 9500.0000 10000.0000 10500.0000 11000.0000 11500.0000 12000.0000 12500.0000 13000.0000 13500.0000 14000.0000 14500.0000 15000.0000 15500.0000 16000.0000 16500.0000 17000.0000 17500.0000 18000.0000 GUmax. dB 24.43 23.59 23.98 23.36 23.08 21.84 20.54 19.29 18.25 17.44 16.77 16.02 15.30 14.55 13.90 13.31 12.82 12.33 11.93 11.63 11.41 11.18 10.91 10.67 10.39 10.10 9.87 9.57 9.49 9.37 9.40 9.35 9.34 9.25 9.01 8.77 11.32 12.82 12.32 11.73 11.41 10.92 10.95 11.06 11.35 11.77 GAmax. dB | S21 |2 dB 14.39 14.23 14.33 14.23 14.19 14.00 13.74 13.41 13.13 12.83 12.57 12.24 11.89 11.50 11.15 10.83 10.54 10.24 9.97 9.74 9.56 9.37 9.16 8.97 8.76 8.56 8.41 8.17 8.09 7.96 7.89 7.78 7.70 7.59 7.35 7.13 | S12 |2 dB -39.32 -33.35 -29.82 -27.79 -26.11 -24.62 -23.80 -22.92 -22.38 -21.74 -21.26 -20.86 -20.75 -20.46 -20.18 -20.01 -19.73 -19.59 -19.36 -19.09 -18.85 -18.73 -18.49 -18.47 -18.24 -18.11 -17.79 -17.71 -17.48 -17.04 -17.11 -16.94 -16.77 -16.77 -16.53 -16.37 .89 .58 .38 .36 .33 .38 .44 .49 .54 .58 .61 .65 .71 .77 .82 .88 .91 .96 .99 .99 .98 .99 1.00 1.02 1.04 1.07 1.08 1.11 1.09 1.06 1.03 1.01 .98 .99 .99 1.00 K Delay nsec .045 .045 .048 .042 .054 .053 .049 .043 .044 .042 .042 .042 .039 .039 .035 .034 .034 .033 .032 .030 .032 .035 .033 .031 .034 .032 .031 .032 .028 .031 .031 .032 .037 .036 .037 .037 Mason's U dB 24.564 23.761 25.082 25.247 27.129 27.788 27.293 26.733 26.904 28.524 31.604 35.307 30.255 29.316 26.733 24.067 24.242 22.480 22.389 23.563 25.469 26.884 27.948 25.233 24.117 21.495 20.813 18.944 19.425 20.693 21.818 23.233 26.251 22.793 20.955 19.097 G1 dB 7.96 7.35 7.72 7.35 7.23 6.33 5.45 4.67 4.04 3.65 3.33 3.00 2.70 2.40 2.16 1.93 1.77 1.62 1.51 1.45 1.39 1.31 1.23 1.16 1.06 .96 .86 .78 .74 .71 .72 .73 .72 .69 .63 .55 G2 dB 2.09 2.01 1.93 1.78 1.66 1.50 1.35 1.21 1.08 .97 .86 .78 .70 .65 .59 .55 .51 .48 .45 .44 .46 .50 .53 .55 .57 .59 .60 .61 .66 .69 .79 .85 .92 .98 1.04 1.09
6
NE33284A
Noise Parameters
1.0 2.0 0.5 opt. VDS = 2 V ID = 10 mA 0.5 8 10 2 0 1 dB 1.0 1.5 dB 2 dB -0.5 -2.0 -1.0 f = 4 HGz -1.0 START 2 GHz, STOP 18 GHz, STEP 2 GHz -0.5 -2.0 16 18 0 12 14 1.0 6 4

1.0 2.0 VDS = 2 V ID = 10 mA
VDS = 2 V, ID = 10 mA
opt. Freq (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFmin (dB) 0.32 0.35 0.41 0.50 0.62 0.75 0.88 1.02 1.15 Ga(dB) 16.0 15.0 13.7 12.6 11.5 10.5 9.6 8.8 8.0 Mag. 0.76 0.69 0.63 0.58 0.53 0.49 0.46 0.43 0.41 Ang. (deg.) 18 49 79 110 140 171 -158 -127 -97 Rn/50 0.23 0.19 0.14 0.08 0.05 0.03 0.07 0.09 0.16
7
NE33284A
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions.

For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (IEI1207) [NE33284A]
Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limit*: None Terminal temperature: 230 C or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol IR30-00
Partial heating method
*:
Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less.
Note: Do not apply more than a single process at once, except for "Partial heating method". PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the Japanese law concerned and so on, especially in case of removal.
8
NE33284A
[MEMO]
9
NE33284A
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
2

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